| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can reduce the power consumption of a semiconductor device and, at the same time, can increase the switching speed. SOLUTION: A method of manufacturing a semiconductor device provided with an interconnection obtained by doping first and second conductivity type impurities. In this manufacturing method, electron beams or charged particles, which have an energy level between 250 keV and 500 keV, are cast on the surface of the semiconductor device. Thereafter, the semiconductor device cast with such electron beams or charged particles is annealed in a hydrogen atmosphere.
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