发明名称 Process for producing silicon
摘要 A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.
申请公布号 US4448651(A) 申请公布日期 1984.05.15
申请号 US19820387115 申请日期 1982.06.10
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY 发明人 OLSON, JERRY M.;CARLETON, KAREN L.
分类号 C25B1/00;(IPC1-7):C25B1/00;C25C7/00 主分类号 C25B1/00
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