| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve productivity of a semiconductor device. SOLUTION: By providing an ion extractor 12, mass spectrograph 16 deflecting an ion in a fixed direction despite a charged condition of the ion coming from the ion extractor 12 and a polarity changer 40 changing a direction of a magnetic field in the mass spectrograph 16 by the charged condition of the ion, a shallow/deep impurity layer can be formed on a wafer impossible in an ion implantation device by conventional technique without changing the device. That is, not only B<+> and P<+> but also BF<+> can be ion implanted by using the single ion implantation device. Consequently, as compared with in the past, productivity of a semiconductor device can be farther enhanced.</p> |
