发明名称 |
Semiconductor device with local interconnect of metal silicide |
摘要 |
A first metal silicide film is formed on an exposed silicon region of a substrate on which the silicon region and an insulating region are exposed. A metal film is deposited over the whole surface of the substrate covering the first metal silicide film, the metal film capable of being silicidized. A silicon film is deposited on the surface of the metal film. The silicon film and metal film are patterned to form a lamination pattern of the silicon film and metal film continuously extending from a partial area of the exposed silicon region to a partial area of the insulating region. The lamination pattern is heated to establish a silicidation reaction and form a second metal silicide layer.
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申请公布号 |
US6157068(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19990246704 |
申请日期 |
1999.02.09 |
申请人 |
FUJITSU LIMITED |
发明人 |
HASHIMOTO, KOICHI;HAYASHI, HIROMI |
分类号 |
H01L21/28;H01L21/768;H01L21/8244;H01L27/11;H01L29/43;H01L29/78;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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