| 摘要 |
<p>Photoconductive devices (1,2) comprising MgxZn1-xO, that is preferably epitaxially deposited on a substrate (21), optionally also including a buffer layer (22), wherein x has a value such that the layer is sensitive to UV light. The a MgZnO device (2) having predetermined electrical and optical properties and first and second electrodes (3) deposited on a surface of the device, the second electrode being spaced from the first electrode. A voltage source (4) is connected across the first and second electrodes to create an electric field within the device. In operation, when the surface of the device upon which the electrodes are deposited is subjected to a photon emission, electron-hole pairs are created within the device and flow within the device because of the electric field.</p> |
