| 摘要 |
<p>A method for manufacturing a thin film transistor substrate is provided to reduce the number of mask processes even using a conventional mask without a slit mask or a halftone mask, by using a photoresist reflowed in a specific temperature range. A gate-insulating layer(400), a semiconductor layer, an ohmic contact layer, and a data metal layer are sequentially deposited on a substrate(110) including a gate wire. A photoresist pattern(PR) is formed in a source electrode formation region and a drain electrode formation region. The data metal layer is etched by using the photoresist pattern as an etch stop layer, thereby forming a data wire including a source electrode(620) and a drain electrode(630). The photoresist pattern is reflowed to cover a channel region between the source electrode and the drain electrode. The ohmic contact layer and the semiconductor layer are etched by using the reflowed photoresist pattern as an etch stop layer, thereby forming an active pattern(500). The reflowed photoresist pattern is selectively removed through an etch-back process, thereby exposing the channel region. A channel of a thin film transistor is formed by using the etched photoresist pattern as an etch stop layer.</p> |
