| 摘要 |
<p>A method for manufacturing a transparent thin film transistor is provided to improve contact characteristic between an active layer and source and drain electrodes by employing a transparent oxide semiconductor. A gate electrode(110) and a gate dielectric(120) are sequentially formed on a substrate(100). A transparent oxide semiconductor layer is formed on the gate dielectric. The transparent oxide semiconductor layer is patterned to form an active layer(131). Source and drain electrodes(151,152) contacting to the active layer are formed on the gate dielectric. Between a process for forming the active layer and a process for forming the source and drain electrodes, plasma treatment is performed on the active layer surface contacted to the source and drain electrodes. The plasma treatment is performed by using a mixed gas of oxygen and hydrogen. The transparent oxide semiconductor is comprised of one selected from a zinc oxide(ZnO), an indium-zinc oxide(InZnO), and a zinc tin oxide(ZnSnO).</p> |
