Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device

摘要

The present invention has an object to provide an epitaxial film forming method of epitaxially growing a high-quality group III nitride semiconductor thin film on an α-Al2O3 substrate by a sputtering method. An epitaxial film forming method according to an embodiment of the present invention includes forming an epitaxial film of a group III nitride semiconductor thin film on an α-Al2O3 substrate placed on a substrate holder (111) including a heater electrode (104) and a bias electrode (103) in a sputtering apparatus (1) by applying high-frequency power to a target electrode (102) and applying high-frequency bias power to the bias electrode (103) while the heater electrode (104) maintains the α-Al2O3 substrate at a predetermined temperature. In this process, the high-frequency power and the high-frequency bias power are applied so that frequency interference therebetween may not occur.

主权项

1. An epitaxial film forming method of forming an epitaxial film on a substrate by using a sputtering method comprising:
placing the substrate in a vessel in which at least one of a target with a wurtzite structure and a target for forming a film with a wurtzite structure by deposition; applying high-frequency power to a target electrode to which the target is attached, and applying high-frequency bias power to a substrate holder supporting the substrate in such a manner as to suppress frequency interference between the applied high-frequency power and the applied high-frequency bias power; and forming the epitaxial film on the substrate by sputtering the target with plasma generated by the high-frequency power, wherein the forming the epitaxial film includes causing the target to give off a molecule of the target by applying the high-frequency power to the target electrode while generating an electric field that orients a polarization from a negative charge to a positive charge of the molecule toward the substrate supported by the substrate holder by applying the high-frequency bias power to the substrate holder.