Solid-state image sensing device and method for manufacturing the same

摘要

The present invention improves the performance of an image sensor. In a planar view, fluorine is introduced into a part overlapping with a channel region in a gate electrode GE1 of an amplification transistor and is not introduced into the interior of a semiconductor substrate 1S. Concretely as shown in FIG. 20, a resist film FR1 is patterned in the manner of opening the part planarly overlapping with the channel region in the gate electrode GE1. Then fluorine is injected into the interior of the gate electrode GE1 exposed from an opening OP1 by an ion implantation method using the resist film FR1 in which the opening OP1 is formed as a mask.

主权项

1. A method for manufacturing a solid-state image sensing device provided with a semiconductor substrate having an imaging region in which a plurality of pixels are formed,
wherein the imaging region includes:
photoelectron conversion sections to convert incident light into an electric charge; andamplification transistors to amplify an electric signal based on the electric charge, each amplification transistor including:
a source region and a drain region formed in the semiconductor substrate so as to be isolated from each other;a channel region interposed between the source region and the drain region;a gate insulation film formed over the channel region; anda gate electrode formed over the gate insulation film, the method comprising the steps of:
(a) forming the gate insulation film over the semiconductor substrate;(b) forming a first conductive film over the gate insulation film;(c) patterning the first conductive film and forming the gate electrode;(d) after step (c), forming the source region and the drain region in the semiconductor substrate;(e) after step (d), introducing fluorine into a portion of the gate electrode overlapping with the channel region in plan view; and(f) after step (e), heating the semiconductor substrate.