Nonvolatile memory having memory array with differential cells

摘要

A nonvolatile memory includes a memory array. The memory array is connected to m word lines and (2+n) bit line pairs. These bit line pairs include an erase bit line pair, a program bit line pair and n data bit line pairs. Each word line is connected with (2+n) differential cells of a corresponding row. The (2+n) differential cells include an erase flag differential cell, a program flag differential cell and n data differential cells. The erase flag differential cell is connected with the erase bit line pair. The program flag differential cell is connected with the program line pair. The n data differential cells are connected with the data line pairs. The n data differential cells are determined as erased cells or programmed cells according to setting conditions of the erase flag differential cell and the program flag differential cell.

主权项

1. A nonvolatile memory, comprising:
a memory array connected to m word lines and (2+n) bit line pairs, wherein the (2+n) bit line pairs comprise an erase bit line pair, a program bit line pair and n data bit line pairs, wherein each of the word lines is connected with (2+n) differential cells of a corresponding row of the memory array, wherein the (2+n) differential cells comprise an erase flag differential cell, a program flag differential cell and n data differential cells, wherein the erase flag differential cell is connected with the erase bit line pair, the program flag differential cell is connected with the program line pair, and the n data differential cells are connected with the corresponding data line pairs, wherein if the erase flag differential cell of the row is set, the n data differential cells of the row are determined as the erased cells, wherein if the erase flag differential cell and the program flag differential cell of the row are both set, the n data differential cells of the row are determined as the programmed cells.