发明名称 MANUFACTURE, POLISHING METHOD AND POLISHING DEVICE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To restrain loading of a polishing pad by supplying particles and slurry for deposit scraping to scrape deposit on a polishing pad surface of the polishing pad surface separately or as a mixture. SOLUTION: Working liquid 7 is supplied between a surface of a polishing pad 4 and a working surface of a wafer 1. In this state, the polishing pad 4 and the wafer 1 relatively slide. Fine irregularities of the working surface are removed by mechanical and chemical polishing work by the working liquid 7. The working liquid 7 is made of liquid 71 to be a solvent, abrasive grains 72 for polishing and particles for deposit scraping. The particles 73 are a sperical member formed of polymers (for example, an acrylic resin or ethylene resin the vertical elastic coefficient of which is about 2 to 3 Gpa).
申请公布号 JPH10337650(A) 申请公布日期 1998.12.22
申请号 JP19980095682 申请日期 1998.04.08
申请人 HITACHI LTD 发明人 OKAWA TETSUO;KOJIMA HIROYUKI;SATO HIDEMI;NISHIGUCHI TAKASHI
分类号 B24B53/017;H01L21/304 主分类号 B24B53/017
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