| 摘要 |
A radiation-emitting semiconductor component having a radiation-transmissive substrate ( 1 ), on the underside of which a radiation-generating layer ( 2 ) is arranged, in which the substrate ( 1 ) has inclined side areas ( 3 ), in which the refractive index of the substrate ( 1 ) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region ( 4 ), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate ( 1 ) has essentially perpendicular side areas ( 5 ) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.
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