发明名称 |
Interlayer dielectric for charge loss improvement |
摘要 |
A method of manufacturing a memory device includes forming a first dielectric layer over a substrate and forming a charge storage element over the first dielectric layer. The method also includes forming a second dielectric layer over the charge storage element and forming a control gate over the second dielectric layer. The method further includes depositing an interlayer dielectric over the control gate at a high temperature.
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申请公布号 |
US7300886(B1) |
申请公布日期 |
2007.11.27 |
申请号 |
US20050147208 |
申请日期 |
2005.06.08 |
申请人 |
SPANSION LLC;ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO MINH VAN;CHENG NING;LI WENMEI;HUI ANGELA T.;GAO PEI-YUAN;HUERTAS ROBERT A. |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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