NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an inexpensive nonvolatile semiconductor memory device which is highly integrated.

SOLUTION: The nonvolatile semiconductor memory device 100 has a plurality of memory strings MS each having a plurality of electrically rewritable memory cells connected in series. The memory strings MS are each provided with: a memory columnar semiconductor layer 38 vertically extending for a substrate, first to fourth word line conductor layers 36a-36d formed in parallel to a semiconductor substrate Ba and having a fourth gap Ag4 between the side walls of the memory columnar semiconductor layer 38; and a charge accumulating layer 39b formed on the side wall of the charge accumulating layer 39b formed on the side surface of the first to fourth word line conductive layers 36a-36d facing the fourth gap Ag 4. The first to fourth word line conductive layers 36a-36d are configured so as to relatively move for the memory columnar semiconductor layer 38.

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