FLOATING-GATE TRANSISTOR PHOTODETECTOR

摘要

A field effect transistor photodetector that can operate in room temperature includes a source electrode, a drain electrode, a channel to allow an electric current to flow between the drain and source electrodes, and a gate electrode to receive a bias voltage for controlling the current in the channel. The photodetector includes a light-absorbing material that absorbs light and traps electric charges. The light-absorbing material is configured to generate one or more charges upon absorbing light having a wavelength within a specified range and to hold the one or more charges. The one or more charges held in the light-absorbing material reduces the current flowing through the channel.

主权项

1. A method comprising:
applying a voltage difference between a source electrode and a drain electrode, and applying a bias voltage to a gate electrode, to cause an electric current to flow from the source electrode through a channel to the drain electrode; generating one or more electric charges by using a light-absorbing material to absorb light and generate the one or more electric charges; trapping the one or more electric charges within the light-absorbing material; and reducing the current flowing in the channel by using the trapped one or more electric charges in the light-absorbing material to influence charge carriers in the channel.