| 发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
The present invention provides a semiconductor structure, including a substrate having a first fin structure and a second fin structure disposed thereon, a first isolation region located between the first fin structure and the second fin structure, a second isolation region located opposite the first fin structure from the first isolation region, and at least an epitaxial layer disposed on the side of the first fin structure and the second fin structure. The epitaxial layer has a bottom surface, the bottom surface extending from the first fin structure to the second fin structure, and the bottom surface is lower than a bottom surface of the first isolation region and a top surface of the second isolation region. |
| 申请公布号 |
US2016365344(A1) |
申请公布日期 |
2016.12.15 |
| 申请号 |
US201514792591 |
申请日期 |
2015.07.06 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Feng Li-Wei;Tsai Shih-Hung;Liu Hon-Huei;Lin Chao-Hung;Huang Nan-Yuan;Jenq Jyh-Shyang |
| 分类号 |
H01L27/088;H01L21/306;H01L21/762;H01L29/06;H01L21/8234 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a substrate having a first fin structure and a second fin structure disposed thereon; a first isolation region located between the first fin structure and the second fin structure; a second isolation region located opposite the first fin structure from the first isolation region; and at least an epitaxial layer disposed on the side of the first fin structure and the second fin structure, wherein the epitaxial layer has a bottom surface, the bottom surface extending from the first fin structure to the second fin structure, and the bottom surface is lower than a bottom surface of the first isolation region and a top surface of the second isolation region, in addition, the epitaxial layer has a stepped-shaped sidewall profile. |
| 地址 |
Hsin-Chu City TW |
