发明名称 |
High temperature process chamber having improved heat endurance |
摘要 |
A high temperature process chamber that has improved heat endurance and a method for improving heat endurance of a process chamber are described. In the high temperature process chamber, a heat insulating adapter is connected in-between a lift cylinder and a chamber body in which a plasma ashing process is conducted at 250° C. The heat insulating adapter prevents substantially heat conduction from the chamber body to the lift cylinder such that the cylinder can be safely operated at a temperature lower than 40° C. The present invention method for improving heat endurance of a process chamber can be carried out by connecting a heat insulating adapter between a wafer pedestal and a lift cylinder, conducting a process at a temperature of at least 200° C., and preferably at least 250° C. in the process chamber while maintaining a temperature of the lift cylinder at below 40° C.
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申请公布号 |
US6485605(B1) |
申请公布日期 |
2002.11.26 |
申请号 |
US20000553303 |
申请日期 |
2000.04.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
TSENG HUAN-LIANG;CHAN HSYUN-YING;CHENG PING-JEN |
分类号 |
H01L21/00;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/00 |
代理机构 |
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地址 |
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