发明名称 High temperature process chamber having improved heat endurance
摘要 A high temperature process chamber that has improved heat endurance and a method for improving heat endurance of a process chamber are described. In the high temperature process chamber, a heat insulating adapter is connected in-between a lift cylinder and a chamber body in which a plasma ashing process is conducted at 250° C. The heat insulating adapter prevents substantially heat conduction from the chamber body to the lift cylinder such that the cylinder can be safely operated at a temperature lower than 40° C. The present invention method for improving heat endurance of a process chamber can be carried out by connecting a heat insulating adapter between a wafer pedestal and a lift cylinder, conducting a process at a temperature of at least 200° C., and preferably at least 250° C. in the process chamber while maintaining a temperature of the lift cylinder at below 40° C.
申请公布号 US6485605(B1) 申请公布日期 2002.11.26
申请号 US20000553303 申请日期 2000.04.20
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 TSENG HUAN-LIANG;CHAN HSYUN-YING;CHENG PING-JEN
分类号 H01L21/00;(IPC1-7):C23C16/00 主分类号 H01L21/00
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