发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve yield by dividing LSI into two portions of a high voltage resistance chip and an ordinary chip. CONSTITUTION:A high voltage resistance chip 1 is loaded on a package 10, an ordinary chip 6 is loaded thereon on the phase-up basis, and both chips 1, 6 are connected with pads 5, 8. The pads 4 in the periphery of chip 1 and interval leads 11 metallized to the package 10 are bonded by wires 13. The internal lead 11 is connected to external lead 12 of package. A low voltage regulator circuit is formed on the chip 1 and it is used as the power source of chip 6.
申请公布号 JPS6159762(A) 申请公布日期 1986.03.27
申请号 JP19840181081 申请日期 1984.08.30
申请人 FUJITSU LTD 发明人 ASAMI FUMITAKA
分类号 H01L25/18;H01L23/64;H01L25/065;H01L25/07 主分类号 H01L25/18
代理机构 代理人
主权项
地址