发明名称 |
A fabrication method for making a planar cantilever, low surface leakage, reproducible and reliable metal dimple contact micro-relay MEMS switch, |
摘要 |
A method for pseudo-planarization of an electromechanical device and for forming a durable metal contact on the electromechanical device and devices formed by the method are presented. The method comprises acts of depositing various layers forming a semiconductor device. Two principal aspects of the method include the formation of a planarized dielectric/conductor layer on a substrate and the formation of an electrode in an armature of a microelectromechanical switch, with the electrode formed such that it interlocks a structural layer of the armature to ensure it remains fixed to the armature over a large number of cycles. The present invention also relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region though the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer. |
申请公布号 |
GB2427758(A) |
申请公布日期 |
2007.01.03 |
申请号 |
GB20060018409 |
申请日期 |
2005.02.17 |
申请人 |
WIRELESS MEMS INCORPORATED |
发明人 |
CHIN-SHIN CHOU |
分类号 |
H01H11/00;B44C1/22;B81B3/00;B81C1/00;C03C15/00;C03C25/68;C23F1/00;H01H1/00;H01H51/22;H01H57/00;H01H59/00;H01L21/00;H01L31/00;H01P1/10 |
主分类号 |
H01H11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|