Transistor assembly as an ESD protection measure

摘要

A diode (23) is arranged near a transistor (25) to protect from ESD. The diode comprises a well (5) of a first conductivity type and a doped region (4) of a second conductivity type in opposition to the first conductivity type. The transistor comprises a doped well (2) and a doped region (1) of the first conductivity type. The well (2) of the transistor is doped lower than the well (5) of the diode.

主权项

1. A transistor assembly comprising:
a transistor that has a well of a first conductivity type and a doped region of the first conductivity type arranged outside the well; and a diode that has an additional well of the first conductivity type and a doped region of a second conductivity type opposite to the first conductivity type arranged outside the additional well, wherein the doped region of the diode is arranged between the diode well and the doped region of the transistor, and the transistor well and the diode well are electroconductively connected to one another, and wherein there is a sufficiently small distance between the doped region of the transistor and the diode well, and the transistor well has a sufficiently lower doping than the diode well that a bipolar transistor formed between the transistor well as collector, the doped region of the diode as base and the doped region of the transistor as emitter is configured to have a lower current gain than a bipolar transistor formed by the diode well as collector, the doped region of the diode as base and the doped region of the transistor as emitter, wherein only one pn junction is present on a first path leading from the doped region of the transistor nearest the diode to the doped region of the diode, wherein only one pn junction is present on a second path leading from the transistor well, through a substrate made of semiconductor material below the doped region of the transistor nearest the diode, and to the doped region of the diode nearest the transistor, wherein the diode well has a doping that is at least twice as high as the doping of the transistor well, wherein a contact connection connects the transistor well to the diode well, the transistor well not being connected to the doped region of the diode, and wherein on the side of the diode well facing away from the doped region of the diode, the diode has a further doped region of the second conductivity type, the further doped region being electroconductively connected to the doped region of the diode by a further contact connection.