Selectively degrading current resistance of field effect transistor devices

摘要

A method includes selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET. The second finFET is electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET.

主权项

1. A method for selectively degrading a current capacity of a finned-field-effect-transistor (finFET), comprising:
forming a first finFET and a second finFET on a substrate; implanting the second finFET with an implantation material selected to alter an ability of a fin of the second finFET to grow an epitaxial layer; and epitaxially growing a first epitaxial layer on a fin of the first finFET and a second epitaxial layer on a fin of the second finFET, the first epitaxial layer having a height different than the second epitaxial layer due to the implantation material in the fin of the second finFET.