发明名称 Semiconductor structures for enhanced transient response in low dropout (LDO) voltage regulators
摘要 Systems, semiconductor structures, electronic circuits and methods for enhanced transient response in Low Dropout (LDO) voltage regulators are disclosed. For example, a semiconductor structure for enhanced transient response in an LDO voltage regulator is disclosed, which includes a first current mirror circuit coupled to an input connection and an output connection of the LDO voltage regulator, a second current mirror circuit coupled to the input connection of the LDO voltage regulator. A first input of a first amplifier circuit is coupled to the second current mirror circuit, a second input of the first amplifier circuit is coupled to the output connection of the LDO voltage regulator, and a third input of the first amplifier circuit is coupled to a reference voltage. An input of a second amplifier circuit is coupled to an output of the first amplifier circuit, an output of the second amplifier circuit is coupled to the first current mirror circuit, an input of a third amplifier circuit is coupled to the output of the first amplifier circuit, and an output of the third amplifier circuit is coupled to the second current mirror circuit. In some implementations, the semiconductor structure is an adaptively-biased LDO voltage regulator formed in a power management integrated circuit (PMIC) or in a power supply on a semiconductor IC, wafer, chip or die.
申请公布号 US9383618(B2) 申请公布日期 2016.07.05
申请号 US201414336870 申请日期 2014.07.21
申请人 Intersil Americas LLC 发明人 Luff Gwilym
分类号 G05F3/02;G02F1/1368;G05F1/56 主分类号 G05F3/02
代理机构 Fogg & Powers LLC 代理人 Fogg & Powers LLC
主权项 1. A semiconductor structure, comprising: a first current mirror circuit, the first current mirror circuit coupled to an input connection and an output connection of the semiconductor structure; a second current mirror circuit, the second current mirror circuit coupled to the input connection of the semiconductor structure; a first amplifier circuit, a first input of the first amplifier circuit coupled to the second current mirror circuit, a second input of the first amplifier circuit coupled to the output connection of the semiconductor structure, and a third input of the first amplifier circuit coupled to a reference voltage; a second amplifier circuit, an input of the second amplifier circuit coupled to an output of the first amplifier circuit, and an output of the second amplifier circuit coupled to the first current mirror circuit; and a third amplifier circuit, an input of the third amplifier circuit coupled to the output of the first amplifier circuit, and an output of the third amplifier circuit coupled to the second current mirror circuit.
地址 Milpitas CA US