| 发明名称 | Edge termination structures for silicon carbide devices | ||
| 摘要 | An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon carbide layer that at least partially surround a silicon carbide-based junction, an insulating layer on the floating guard rings, and a silicon carbide surface charge compensation region between the floating guard rings and adjacent the surface of the silicon carbide layer. A silicon nitride layer is on the silicon carbide layer, and an organic protective layer is on the silicon nitride layer. An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer. Methods of forming edge termination structures are also disclosed. | ||
| 申请公布号 | US9515135(B2) | 申请公布日期 | 2016.12.06 |
| 申请号 | US200611331325 | 申请日期 | 2006.01.12 |
| 申请人 | Cree, Inc. | 发明人 | Ryu Sei-Hyung;Agarwal Anant K.;Ward Allan |
| 分类号 | H01L31/0312;H01L29/06;H01L21/04;H01L23/31;H01L29/66;H01L29/872;H01L29/16 | 主分类号 | H01L31/0312 |
| 代理机构 | Myers Bigel & Sibley | 代理人 | Myers Bigel & Sibley |
| 主权项 | 1. An edge termination structure for a silicon carbide semiconductor device, comprising: a plurality of spaced apart concentric floating guard rings in a silicon carbide layer, the plurality of spaced apart concentric floating guard rings at least partially surrounding a silicon carbide-based junction; a Schottky contact on the silicon carbide layer, the Schottky contact forming a Schottky junction with the silicon carbide layer; an insulating structure on the silicon carbide layer, the insulating structure comprising a passivation layer on the silicon carbide layer and a silicon nitride layer on the passivation layer; an organic protective layer on the silicon nitride layer, wherein the organic protective layer comprises polyimide; and a plurality of silicon carbide surface charge compensation regions between the floating guard rings and adjacent the silicon carbide layer, wherein bottom surfaces of the plurality of floating guard rings are planar and located deeper in the silicon carbide layer than planar bottom surfaces of the plurality of silicon carbide surface charge compensation regions wherein sidewalls of the passivation layer, the silicon nitride layer and the organic protective layer are aligned with a sidewall of the Schottky contact. | ||
| 地址 | Durham NC US | ||