发明名称 |
Method for forming interconnections in an integrated circuit |
摘要 |
The invention provides a method for producing wiring and contacts in an integrated circuit including the steps of forming insulated gate components on a semiconductor substrate; applying a photo-reducible dielectric layer to cover the substrate; etching holes and forming contacts; photo-reducing the dielectric to increase its conductivity; covering the resulting structure with an interconnect layer; etching the interconnect layer to define wiring in electrical contact with the contacts; and oxidizing the dielectric to reduce its conductivity.
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申请公布号 |
US5851919(A) |
申请公布日期 |
1998.12.22 |
申请号 |
US19970851803 |
申请日期 |
1997.05.06 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
PAPADAS, CONSTANTIN |
分类号 |
H01L21/3213;H01L21/768;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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