SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device, using a highly reliable TFT structure. SOLUTION: A CMOS circuit formed on a substrate 101 is provided with a sub-gate wiring (first wiring) 102a and a main gate wiring (second gate wiring) 107a on an N-channel TFT. An LDD region 113 overlaps on the first wiring 102a and does not overlap on the second wiring 107a. When a gate voltage is applied to the first wiring, a GOLD structure is obtained and turns into LDD structure, if voltage is not applied. GOLD structure and LDD structure can separately be used according to circuit specifications.