A MOS FIELD EFFECT TRANSISTOR HAVING ISOLATION STRUCTURE AND METHODS OF MANUFACTURING THE SAME

摘要

Disclosed is a metal oxide semiconductor field effect transistor having isolation structure in accordance with the invention, wherein N-type MOS field effect transistor comprises: a first N-type well, a first P-type area which surrounds a first source region and a first contact region is formed in the first N-type well, a first drain region is also formed in the first N-type well; wherein P-type MOS field effect transistor comprises: a second N-type well, a second P-type area which surrounds a second drain region is formed in the second N-type well, a second source region and a second contact region are formed in the second N-type well.Moreover, a gate is disposed on a thin gate oxide layer and a thick field oxide layer so as to control the current quantity of channel of field effect transistor module, the separated P-type areas are formed in P-type substrate to provide an isolation between the field effect transistors. Furthermore, a first interval and a second interval may improve the breakdown voltage of the field effect transistor module.