| 摘要 |
The present invention discloses a three-dimensional nonvolatile semiconductor memory apparatus. According to an embodiment of the present invention, the three-dimensional nonvolatile semiconductor memory apparatus includes: a cell area including a plurality of memory cells; a page buffer storing data of the cell area by page units; a decoder located in the lower portion of the cell area and providing a word line voltage to word lines of the cell area; a first upper line located above the cell area and transmitting the word line voltage; a lower connection structure located below the cell area and transmitting the word line voltage to the decoder; and a first via located in an area between the cell area and the page buffer, and connecting the first upper line and the lower connection structure, thereby improving an operation characteristic of a chip and preventing the increase in the size of the chip. |
