| 发明名称 |
Manufacturing method for forming semiconductor structure |
| 摘要 |
The present invention provides a method for forming a semiconductor structure, comprising: firstly, a substrate is provided, next, a first dry etching process is performed, to form a recess in the substrate. Afterwards, an ion implantation process is performed to a bottom surface of the recess, a wet etching process is then performed, to etch partial sidewalls of the recess, so as to form at least two tips on two sides of the recess respectively, and a second dry etching process is performed, to etch partial bottom surface of the recess, wherein after the second dry etching process is performed, a lower portion of the recess has a U-shaped cross section profile. |
| 申请公布号 |
US9502244(B2) |
申请公布日期 |
2016.11.22 |
| 申请号 |
US201615166291 |
申请日期 |
2016.05.27 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lin Yu-Ying;Chen Kuang-Hsiu;Guo Ted Ming-Lang;Wang Yu-Ren |
| 分类号 |
H01L29/06;H01L21/02;H01L29/423;H01L21/76;H01L21/3065;H01L21/306;H01L21/265 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for forming a semiconductor structure, comprising:
providing a substrate; performing a first dry etching process, to form a recess in the substrate; performing an ion implantation process on a bottom surface of the recess; performing a wet etching process, to etch partial sidewalls of the recess, so as to form at least two tips on two sides of the recess respectively; and performing a second dry etching process, to etch partial bottom surface of the recess, wherein after the second dry etching process is performed, a lower portion of the recess has a U-shaped cross section profile. |
| 地址 |
Hsin-Chu TW |
