| 摘要 |
PURPOSE:To provide a semiconductor device and its manufacture method which provides good breakdown strength without a larger-size chip. CONSTITUTION:The first and second electrode layers 11 and 13 are formed. An inorganic silicon oxide film 15 is so formed that they are covered. Above a part of the surface of the first electrode layer 11, while on the surface of inorganic silicon oxide film 15, an organic silicon oxide film 17 is formed. In the area of inorganic silicon oxide film 15 where the organic silicon oxide film 17 is not formed, a through hole 15a is formed, for a part of the second electrode layer 13 to be exposed. A wiring layer 19 is so formed that, through the through hole 15a, it touches the second electrode layer 13 and, again, it faces the first electrode layer 11 through the inorganic silicon oxide film 15 and organic silicon oxide film 17. |
