| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which, when a semiconductor wafer wherein a packaging resin layer is formed on one surface side is cut into pieces to manufacture a semiconductor device, the semiconductor device can be industrially manufactured that hardly generates any cracking in a semiconductor wafer and can be made thin. <P>SOLUTION: One end of a wiring pattern 22 is respectively connected with electrode terminals 12 and 12 formed on a semiconductor wafer 10, and a columnar electrode 24 is erected at the other end thereof, and the semiconductor wafer 10 is packaged with resin so that the top end face of the columnar electrode 24 may be exposed. Then, the semiconductor wafer 10 is cut into pieces to manufacture the semiconductor device. After a frame 32 is formed along a cutting line 34 to cut the semiconductor wafer 10 and surrounds a part of the piece for the semiconductor itself, the semiconductor wafer 10 is packaged with resin so that the top end face of the columnar electrode 24 and the frame 32 may expose, and then, the frame 32 is removed to form a groove 36. The semiconductor wafer 10 is cut along a cutting line 34 thereof exposed on the bottom surface of the groove 36. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
