| 摘要 |
PURPOSE: A method for making a metal contact of a semiconductor device is provided to make a metal wiring of a low contact resistance at a metal contact hole of a small aspect ratio, by directly forming a titanium-silicide without a heat treatment on a diffusion layer through CVD method having a superior step coverage. CONSTITUTION: A gate oxide layer(30) and a polysilicon layer(40) are deposited on a semiconductor substrate(10) so as to form a gate electrode, and a spacer(50) and a diffusion layer(60) are formed. a barrier oxide layer(70) for preventing a silicide generation is deposited on a part not forming a silicide. A metal layer(80) for forming a silicide is formed on the resultant structure, thus the first metal silicide layer(90) is formed by the first heat treatment. The metal layer is removed by a selective wet-etching method, and then the second heat treatment is performed. An interfacial insulating layer is deposited on the resultant structure, and a contact hole is patterned. The second metal silicide layer(95) is formed on a lower part of the contact hole.
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