| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method to obtain an epitaxial wafer for a semiconductor light emitting element of a low operation voltage which takes a countermeasure so as not to generate thyristor characteristics, and which has good reproducibility and high luminance. <P>SOLUTION: In the method of manufacturing the epitaxial wafer for the semiconductor light emitting element, at least a light emitting unit 10 sandwiching an active layer 4 between an n-type clad layer 3 and a p-type clad layer 5, and a window layer 7 made of a semiconductor in which a p-type dopant is added in higher concentration than the p-type clad layer 5 on the light emitting unit 10, are laminated by an MOVPE method on a substrate 1. The flow of gas containing an n-type dopant is started during a temperature rising process before a first layer n-type semiconductor layer is grown on the substrate 1 or before the temperature rising, the state that the gas containing the n-type dopant flows is maintained, and a first layer n-type semiconductor layer is grown on the substrate 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
