Compact electrostatic discharge (ESD) protection structure

摘要

A multi-gate Schottky depletion-mode field effect transistor (FET), at least one diode and two resistors comprise a compact electrostatic discharge (ESD) protection structure. This ESD protection structure can be laid out in a smaller area than typical multiple diode ESD devices. The multi-gate FET may comprise various types of high-electron-mobility transistor (HEMT) devices, e.g., (pseudomorphic) pHEMT, (metamorphic) mHEMT, induced HEMT. The multiple gates of the Schottky field effect device are used to form an ESD trigger and charge draining paths for protection of circuits following the ESD protection device. Both single and dual polarity ESD protection devices may be provided on an integrated circuit die for protection of input-output circuits thereof.

主权项

1. An electrostatic discharge (ESD) protection device, comprising:
a field effect transistor (FET) having a drain, at least two gates and a source, wherein the drain thereof is coupled to a node of a circuit to be protected from an ESD event; at least one diode coupled between the source of the FET and a power supply common; a first resistor coupled between the at least two gates of the FET; and a second resistor coupled to a one of the at least two gates and the power supply common.