发明名称 SEMICONDUCTOR DEVICE, POWER CONTROL METHOD, AND STORAGE MEDIUM
摘要 According to an embodiment, a semiconductor device can be in an operating state and a standby state with a choice of a plurality of standby state levels and has a CPU, an interrupt control circuit, and a hardware control circuit. The CPU makes a comparison of a first return time period corresponding to a first standby state level that is a shallowest one selected from among allowable standby state levels set for one or more tasks executed immediately before transition to the standby state with a second return time period selected from among allowable return time periods set for the one or more tasks executed, changes a standby state level of the standby state if the first return time period is judged to be longer than the second return time period as a result of the comparison, and controls the hardware control circuit.
申请公布号 US2016282924(A1) 申请公布日期 2016.09.29
申请号 US201514847202 申请日期 2015.09.08
申请人 Kabushiki Kaisha Toshiba 发明人 Sasadate Kai;Kawakami Ken;Sugita Hiroaki
分类号 G06F1/32 主分类号 G06F1/32
代理机构 代理人
主权项 1. A semiconductor device capable of being in an operating state and a standby state with a choice of a plurality of standby state levels, comprising: a CPU capable of executing a plurality of tasks; an interrupt control circuit configured to generate an interrupt signal for transition from the standby state to the operating state; and a power control circuit configured to control operation of each of a plurality of hardware circuits and control power consumed by the plurality of hardware circuits, under control of the CPU, wherein the CPU makes a comparison of a first return time period corresponding to a first standby state level that is a shallowest one selected from among allowable standby state levels set for one or more tasks executed immediately before transition to the standby state with a shortest first allowable return time period selected from among allowable return time periods set for the one or more tasks executed, and sets a standby state level of the standby state to the first standby state level if the first return time period is judged to be not more than the first allowable return time period, changes the standby state level of the standby state to a second standby state level having a return time period shorter than the first return time period if the first return time period is judged to be longer than the first allowable return time period, and controls the power control circuit.
地址 Tokyo JP