发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FABRICATING THEREOF |
摘要 |
<p>A semiconductor device in which a semiconductor layer of a thin film transistor and a first electrode of a capacitor are formed of amorphous silicon and the whole or a part of source/drain regions of the semiconductor layer and the first electrode of the capacitor are crystallized by a metal induced crystallization method, and a channel region of the semiconductor layer is crystallized by a metal induced lateral crystallization method.</p> |
申请公布号 |
KR20060001752(A) |
申请公布日期 |
2006.01.06 |
申请号 |
KR20040050916 |
申请日期 |
2004.06.30 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
PARK, BYOUNG KEON;SEO, JIN WOOK;YANG, TAE HOON;LEE, KI YONG |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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