| 摘要 |
<p>A process for producing insulating films while obviating the problem accompanying the use of a fluorocarbon film as an interlaminar insulating film for semiconductor devices such that the film is heated to, e.g., around 400 to 450 °C upon formation of a tungsten wiring and the heated film not only releases fluorine gas to cause wiring corrosion but also poses various troubles due to the resultant decrease in film thickness. The process comprises converting a fluorocarbon gas and a hydrocarbon gas as the film-forming gas into a plasma to deposit a fluorocarbon film on a semiconductor wafer by means of the resultant active species and subsequently annealing the coated wafer, before wiring formation, in N2, H2, or F2 gas as a treatment gas flowing at a rate of 50 sccm to 1 slm and a pressure of 0.1 Pa to 1 MPa (0.1 Pa to 100 kPa for H2 gas), e.g., at 425 °C for 10 minutes to 2 hours to cause the fluorocarbon film to release F, CF, CF2, CF3, etc. and to cause the resultant free bonds to link to each other to thereby improve thermal stability.</p> |
