| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal silicon carbide ingot of high purity, a less defect and large bore, and a method of manufacturing the same. SOLUTION: A graphite crucible 3 packed with Si crystal lumps 2 is closed with a cap 4 and after the crucible is covered with graphite felt 7, the crucible is placed on a graphite supporting rod 6 and is installed within a double pipe quartz tube 5. The inside of the quartz tube is evacuated to a vacuum and thereafter the raw material temperature is raised up to 2,000 deg.C. Gaseous Ar and gaseous hydrogen carbide C3 H8 are respectively admitted as gaseous atmospheres through purifying devices 11 and 14 and while the pressure in the quartz tube is kept at about 80 kPa, the raw material temperature is raised up to 2,400 deg.C which is a target temperature and thereafter the pressure is reduced down to 1.3 kPa by spending about 30 minutes, following which growth is continued for about 20 hours. The resultant crystal is confirmed to be the single crystal of a hexagonal system having a bore of 51 mm and height of about 6 mm.
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