| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method which determines polishing conditions through simple work procedures, uniformly levels a polished surface of a polishing object, and efficiently finishes the polished surface to a desired face shape. <P>SOLUTION: The polishing method is composed of the following steps. In the first step, the polished surface of a semiconductor wafer 2b on which an SiO<SB>2</SB>film is formed, is abutted on a polishing pad 15, and the former and the latter in an abutting state are relatively moved, followed by acquiring a polishing rate (a change of a polished and removed amount) during polishing of the polished surface of the semiconductor wafer 2b. In the following step, the polishing conditions on which a glass sheet 2a made of SiO<SB>2</SB>is polished are obtained from the acquired polishing rate (the change of the polished and removed amount). In the last step, the glass sheet 2a is polished based on the obtained polishing conditions. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
