发明名称 Noise simulation flow for low noise CMOS image sensor design
摘要 A method for noise simulation of a CMOS image sensor comprises performing a frequency domain noise simulation for a readout circuit of the CMOS image sensor using a computer, wherein the readout circuit includes a correlated double sampling (CDS) circuit, wherein the frequency domain noise simulation includes a CDS transfer function to refer a noise introduced by the CDS circuit back to an input node of the readout circuit. The method further comprises calculating noise at the input node of the readout circuit based on the referred back noises caused by one or more components in the readout circuit and estimating noise of the CMOS imaging sensor by comparing the calculated noise at the input node of the readout circuit to an original input signal to the readout circuit of the CMOS imaging sensor.
申请公布号 US9426393(B2) 申请公布日期 2016.08.23
申请号 US201414177241 申请日期 2014.02.11
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Yeh Shang-Fu;Chou Kuo-Yu;Chen Yi-Che;Tao Wei Lun;Tu Honyih;Chao Calvin Yi-Ping;Hsueh Fu-Lung
分类号 H04N17/00;H04N5/357;H04N5/363;H04N5/378 主分类号 H04N17/00
代理机构 Duane Morris LLP 代理人 Duane Morris LLP
主权项 1. A method for noise simulation of a CMOS image sensor, comprising: performing a frequency domain noise simulation for a readout circuit of the CMOS image sensor using a computer, wherein the readout circuit includes a correlated double sampling (CDS) circuit, wherein the frequency domain noise simulation includes a CDS transfer function to refer a noise introduced by the CDS circuit back to an input node of the readout circuit; calculating noise at the input node of the readout circuit based on the referred back noises caused by one or more components in the readout circuit; and estimating noise of the CMOS imaging sensor by comparing the calculated noise at the input node of the readout circuit to an original input signal to the readout circuit of the CMOS imaging sensor.
地址 Hsin-Chu TW