发明名称 |
Voltage-switched magnetic random access memory (MRAM) and method for using the same |
摘要 |
The present invention is directed to a magnetic random access memory comprising a first magnetic tunnel junction (MTJ) including a first magnetic reference layer and a first magnetic free layer with a first insulating tunnel junction layer interposed therebetween; a second MTJ including a second magnetic reference layer and a second magnetic free layer with a second insulating tunnel junction layer interposed therebetween; and an anti-ferromagnetic coupling layer formed between the first and second variable magnetic free layers. The first and second magnetic free layers have a first and second magnetization directions, respectively, that are perpendicular to the layer planes thereof. The first magnetic reference layer has a first pseudo-fixed magnetization direction substantially perpendicular to the layer plane thereof. The second magnetic reference layer has a second pseudo-fixed magnetization direction that is substantially perpendicular to the layer plane thereof and is substantially opposite to the first pseudo-fixed magnetization direction. |
申请公布号 |
US9443577(B2) |
申请公布日期 |
2016.09.13 |
申请号 |
US201414281673 |
申请日期 |
2014.05.19 |
申请人 |
Avalanche Technology, Inc. |
发明人 |
Wang Zihui;Wang Xiaobin;Gan Huadong;Zhou Yuchen;Huai Yiming |
分类号 |
H01L29/82;G11C11/56;H01L43/08;G11C11/16 |
主分类号 |
H01L29/82 |
代理机构 |
|
代理人 |
Yen Bing K. |
主权项 |
1. A magnetic random access memory (MRAM) element comprising:
a first magnetic tunnel junction (MTJ) including a first magnetic reference layer and a first magnetic free layer with a first insulating tunnel junction layer interposed therebetween, said first magnetic reference layer having a first pseudo-fixed magnetization direction substantially perpendicular to a layer plane thereof, said first magnetic free layer having a first variable magnetization direction substantially perpendicular to a layer plane thereof; a second MTJ including a second magnetic reference layer and a second magnetic free layer with a second insulating tunnel junction layer interposed therebetween, said second magnetic reference layer having a second pseudo-fixed magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first pseudo-fixed magnetization direction, said second magnetic free layer having a second variable magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first variable magnetization direction; and an anti-ferromagnetic coupling layer that couples said first and second magnetic free layers to each other. |
地址 |
Fremont CA US |