发明名称 Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating
摘要 Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.
申请公布号 US2014355343(A1) 申请公布日期 2014.12.04
申请号 US201414307424 申请日期 2014.06.17
申请人 Zeno Semiconductor, Inc. 发明人 Widjaja Yuniarto
分类号 G11C16/22;G11C16/04 主分类号 G11C16/22
代理机构 代理人
主权项
地址 Cupertino CA US