| 摘要 |
PROBLEM TO BE SOLVED: To efficiently take out a generated short wavelength light, by efficiently converting into a visible light etc., without using a transparent electrode of a material hard to realize. SOLUTION: A pn junction is formed between a p-type GaN layer and an n-type GaN layer, and a voltage is applied between a p-side bonding electrode 5 connected to a transparent electrode 6 covering the p-type GaN layer surface and n-side electrode 4 on an exposed part of the n-type GaN layer, thereby flowing a current spread by the transparent electrode 6 from the p-type GaN layer to the pn junction to generate an ultraviolet ray, which is irradiated outside from the pn junction end face exposed on the wall face in a part 100 from which the pn junction is removed. As a result, the ultraviolet ray is taken out without passing through the p-type GaN layer 3 and transparent electrode 6, and hence if a phosphor layer is filled in the pn junction-removed part 100 etc., the ultraviolet ray is converted immediately into a visible light such as red by the phosphor layer, and the visible light is irradiated outside. |
