发明名称 SEMICONDUCTOR ACCELERATION SENSOR AND FABRICATION THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To eliminate the need for aligning the lower stopper. SOLUTION: The fabrication method comprises a step for forming a p+ type buried sacrifice layer 3a extending outward from the outer edge of the central part on one major surface of a single crystal silicon substrate 1, a step for forming an epitaxial layer 4 having a thickness corresponding to a part 4b flexing upon application of an acceleration on one major surface of the single crystal silicon substrate 1, a step for forming a piezo-resistor 5 and a diffusion wiring 6 at the flexible part 4b, a step for forming a metal wiring 11 for taking out an electric signal generated from the flexible part 4b and an electrode pad 12, a step for forming a cut part 10, and a step for removing the sacrifice layer 3a by isotropic etching and forming the flexible part 4b having a central part 4b1 and a beam part 4b2 wherein a weight part 1a is suspended from the flexible part 4b. A p+ type buried sacrifice layer 3b is formed at a part corresponding to the bottom face of the weight part 1a which is made thin by removing the sacrifice layer 3b by isotropic etching.</p>
申请公布号 JPH11230981(A) 申请公布日期 1999.08.27
申请号 JP19980031541 申请日期 1998.02.13
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 ISHIDA TAKUO;KAMAKURA MASAARI
分类号 G01P15/12;H01L29/84;(IPC1-7):G01P15/12 主分类号 G01P15/12
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