| 摘要 |
Disclosed is a photoresist film which is formed in a manner of covering at least a source electrode, a source line, a pixel electrode, a drain electrode, a drain line, a semiconductor film and a protective film, and further covering a gate insulting film in their vicinities. Moreover, wet and dry etchings are sequentially performed by using the photoresist film as a mask. Due to this etching, a residual pattern existing on the gate insulating film is etched.
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