| 摘要 |
PURPOSE: To manufacture a compact accelerometer of a high density, having a sensing shaft in parallel with and/or vertical to the base, at a low cost, by using an on-insulator silicon technique also related to a surface fine treatment. CONSTITUTION: A N single-crystal silicon surface layer 32 is formed on a silicon base 8 through a silicon dioxide layer (insulating layer) by the on-insulator silicon technique. Then, the single-crystal silicon layer is epitaxially grown on a flexible beam 6 to increase the thickness of the vibration mass body 2. Then, the silicon surface layer 32 and the insulating layer 28 are etched to the base 8 to form the vibration mass body 2 as a movable member, the flexible beam 6, and the tooth electrodes 12, 15 and the movable comb-type elements 14, 16, 17 as the measuring means. Then the insulating layer 28 is partially removed to made the movable members 2, 6 free, and the movable members 2, 6 and the base 8 are connected with each other on the remained area. |
