| 摘要 |
PURPOSE: To provide a photomask for forming fine patterns of a semiconductor element with higher than the limit of resolving power, provided in a step or more. CONSTITUTION: This photomask is constituted of chrome patterns 13 formed on a quartz substrate 12, so as to be have the ratio of the line width 3X of the chrome pattern : the width 5X of a space between the chrome patterns = 3.5, a phase inverted object pattern 14 formed by the width, smaller than the linewidth of the chrome patterns 13 at the center part of the space between the chrome patterns 13 and an auxiliary pattern 15, formed at both side parts of the phase inverted object pattern 14 and formed, so as to be the same width as the linewidth of the chrome patterns 13, together with the phase inverted object pattern 14. |
