| 摘要 |
PROBLEM TO BE SOLVED: To simplify a process by a method wherein fluorine is injected to a layer of materials to form an oxide region. SOLUTION: A substrate 100 has a patterning layer 110, and preferably a region where a field oxide region 120 is formed is formed in the substrate 100 by means of a photoresist mask. Fluorine is injected into a surface of the substrate 100, and preferably fluorine atoms are injected into the surface of the substrate 100 by ions injection, to form a fluorine injection region 112. The patterning layer 110 is eliminated, and the fluorine injection region 112 of the substrate 100 is thereafter oxidized, thereby growing the field oxide region and a gate oxide layer. A thickness of the field oxide region is in the range of 1000Åand 10,000Å. A thickness of the gate oxide layer is in the range of 20Åand 1000Å, and preferably in the range of 50Åand 500Å. An amount of fluorine of the field oxide region and the gate oxide layer is preferably in the range of 5*1010 atoms/cm2 and 7*1013 atoms/cm2.
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