| 摘要 |
There is disclosed a dry cleaning technology in which the particles left on the surface of the ultra-fine structure such as a semiconductor device and the like can be cleaned and removed totally in a vacuum environment without being dependent on a wet cleaning method performed in the surrounding atmosphere. In the dry cleaning device of the present invention, the pad is approached to the surface of the wafer such as a semiconductor wafer and the like, cleaning gas is injected into a fine clearance formed between both members to generate a high-speed gas flow along the surface of the wafer and the particles left on the surface of the wafer are physically cleaned and removed with the high-speed gas flow. In addition, in order to assist this physical cleaning action, either a chemical or an electrical cleaning method such as a plasma or the like can be used together. In accordance with the dry cleaning apparatus of the present invention, it is possible to attain a superior cleaning effect corresponding to the prior art wet cleaning method while the wafer is not exposed in the surrounding atmosphere.
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