发明名称 |
SLURRY FOR CHEMICAL MECHANICAL POLISHING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing slurry capable of achieving the high-speed, low-erosion and low-scratch chemical mechanical polishing, in a chemical mechanical polishing processing for a conductive material film. SOLUTION: The chemical mechanical polishing slurry contains polishing particles obtained by blending a first colloidal particle having a primary particle size of 5 to 20 nm at the cumulative frequency point of 50% and a second colloidal particle of the same material as the first colloidal particle having a primary particle size exceeding 20 nm at the cumulative frequency point of 50% in a weight ratio of 0.6 to 0.9 of the first to the second colloidal particle in the total amount of the first and the second colloidal particle. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008098652(A) |
申请公布日期 |
2008.04.24 |
申请号 |
JP20070280816 |
申请日期 |
2007.10.29 |
申请人 |
TOSHIBA CORP;JSR CORP |
发明人 |
MINAMI FUKUGAKU;KURASHIMA NOBUYUKI;YANO HIROYUKI;KAWAHASHI NOBUO;HATTORI MASAYUKI;NISHIMOTO KAZUO |
分类号 |
H01L21/304;B24B37/00;B82Y10/00;B82Y99/00;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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