发明名称
摘要 PROBLEM TO BE SOLVED: To make an optical semiconductor device large in band width. SOLUTION: An optical semiconductor device is composed of a substrate 1, an optical waveguide 3 placed on the substrate 1, a grounding electrode layer 42 formed on the side of the optical waveguide 3 where light is incident, an optical semiconductor element 2 mounted on the grounding electrode layer 52 making its active layer 2a face downward, and a dielectric layer 5 where a linear conductive layer 41 is formed on its upside for the input of microwave signals. At this point, the linear conductive layer 41 is connected to the back electrode 2b of the active layer 2a.
申请公布号 JP3769388(B2) 申请公布日期 2006.04.26
申请号 JP19980245796 申请日期 1998.08.31
申请人 发明人
分类号 H01S5/00;H01S5/042;H01S5/02;H01S5/022;H01S5/062 主分类号 H01S5/00
代理机构 代理人
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